Description
Type: The 1N4007 is a rectifier diode, commonly used for converting alternating current (AC) to direct current (DC) in power supplies and other electronic circuits.
Voltage Rating: It has a maximum repetitive peak reverse voltage (VRRM) of 1000 volts, meaning it can withstand up to 1000V in reverse bias without breaking down.
Current Rating: The diode is rated for a forward average rectified current (IF(AV)) of 1 ampere, making it suitable for low to moderate power applications.
Package Type: The “Through Hole” designation indicates that the diode is designed to be soldered onto a circuit board with leads passing through holes in the board for mounting.
Physical Characteristics: The 1N4007 typically comes in a cylindrical package with two leads (anode and cathode) emerging from one end. Its dimensions are standardized for compatibility with various circuit designs.
Construction: It is constructed using silicon semiconductor material, offering good electrical properties such as low forward voltage drop and high reverse voltage blocking capability.
Applications:
Due to its high voltage and current ratings, the 1N4007 finds application in a wide range of circuits including power supplies, battery chargers, voltage regulators, and rectifiers in various electronic devices.
Temperature Range: The diode is designed to operate over a wide temperature range, typically from -65°C to +175°C, ensuring reliability under different environmental conditions.
Reverse Recovery Time: The 1N4007 has a relatively slow reverse recovery time compared to some other diodes, which may limit its use in high-frequency applications but makes it more suitable for general-purpose rectification.
Power Rectifier Diode Symbol
Technical Details
- Mounting Type: Through Hole
- Package Type: DO-204AL
- Maximum Continuous Forward Current: 1A
- Peak Reverse Repetitive Voltage: 1000V
- Diode Configuration: Single
- Series: 1N4007
- Rectifier Type: General Purpose
- Diode Type: Rectifier
- Pin Count: 2
- Maximum Forward Voltage Drop: 1.1V
- Number of Elements per Chip: 1
- Diode Technology: Silicon Junction
- Diameter: 2.7mm
- Peak Non-Repetitive Forward Surge Current: 45A
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